AZ® nLoF 2000 Series photoresists may be patterned with vertical feature side walls or with re-entrant side walls for lift-off processing. The side wall angle is tunable by adjusting the Post Expose Bake temperature (PEB) and/or exposure dose. The matrix below may be used as a general guideline for setting the re-entrant angle. 

 

 

Process Conditions:

Photoresist: AZ nLoF 2020                                                                                                           Photoresist Thickness: 2.2µm                                                                                                       Mask CD: 2.0µm                                                                                                                                   Soft Bake: 110C / 60s                                                                                                             Develop: 60s single puddle in AZ® 300MIF

 

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