AZ 3318D Photoresist is a medium resolution (0.65um design rules), high thermal stability material optimized for metal RIE etch process environments. 3318D is dyed to reduce pattern damage caused by substrate reflectivity and to minimize CD variation over topography. Very fast in all exposure wavelengths between 350 and 450nm. 3318D covers a coated thickness range of approximately 1.0 to 2.0µm and works well with both organic (MIF) and inorganic developers (AZ Developer or AZ 400K).
6" Si Wafers; Soft Bake 90C
Items in this series
AZ 3312 Photoresist (Gallon)
AZ 3318D Photoresist (Gallon)
AZ 3330F Photoresist (Gallon)
Typical Process
Soft Bake: 90-105C (60s)
Expose: g-line/i-line/h-line
Post Expose Bake: 110-115C
Develop: spray, puddle or immersion
Developer: MIF recommended
0.65µm Lines in AZ® 3318D on Al
1.80µm film thickness
135mJ/cm2 i-line exposure
0.54NA Stepper
AZ 300MIF Develop