AZ 3318D Photoresist is a medium resolution (0.65um design rules), high thermal stability material optimized for metal RIE etch process environments. 3318D is dyed to reduce pattern damage caused by substrate reflectivity and to minimize CD variation over topography. Very fast in all exposure wavelengths between 350 and 450nm. 3318D covers a coated thickness range of approximately 1.0 to 2.0µm and works well with both organic (MIF) and inorganic developers (AZ Developer or AZ 400K).

AZ 3318D Spin Curve

6" Si Wafers; Soft Bake 90C

Items in this series

AZ 3312 Photoresist (Gallon)

AZ 3318D Photoresist (Gallon)

AZ 3330F Photoresist (Gallon)

Typical Process

Soft Bake: 90-105C (60s)

Expose: g-line/i-line/h-line

Post Expose Bake: 110-115C

Develop: spray, puddle or immersion

Developer: MIF recommended

3318D SEM

0.65µm Lines in AZ® 3318D on Al

1.80µm film thickness

135mJ/cm2 i-line exposure

0.54NA Stepper

AZ 300MIF Develop