AZ 15nXT Series Photoresists are cross linking negative tone materials optimized for use in plating, TSV, RIE etch and high energy implant applications. The fully cross linked features are extremely thermally stable and etch resistant, yet strip quickly and easily in most common photoresist removers (AZ 400T Stripper recommended). The 115cps version covers a coated film thickness range of approximately 3.5 to 6.0µm. Develop is very fast in standard MIF Developers (less than 2 minutes in AZ 300MIF for a resist film thickness of 6.0µm). No post bake re-hydration delay required.

AZ 15nXT Series Spin Curves

6" Si Wafers; Soft Bake 110C

Items in this series

AZ 15nXT 115cps Photoresist (Quart)

AZ 15nXT 115cps Photoresist (Gallon)

AZ 15nXT 450cps Photoresist (Quart)

AZ 15nXT 450cps Photoresist (Gallon)

Typical Process

Soft Bake: 110C (60-120s)

Expose: i-line or broadband

Post Expose Bake: 120C

Develop: spray or puddle

Developer: AZ 300MIF


2.5µm Lines in AZ 15nXT on Cu

6.0µm film thickness

300mJ/cm2 i-line exposure

0.54NA Stepper

AZ 300MIF Develop (110s)