AZ 15nXT Series Photoresists are cross linking negative tone materials optimized for use in plating, TSV, RIE etch and high energy implant applications. The fully cross linked features are extremely thermally stable and etch resistant, yet strip quickly and easily in most common photoresist removers (AZ Remover 910 recommended). The 115cps version covers a coated film thickness range of approximately 3.5 to 6.0µm. Develop is very fast in standard MIF Developers (less than 2 minutes in AZ 300MIF for a resist film thickness of 6.0µm). No post bake re-hydration delay required.
6" Si Wafers; Soft Bake 110C
Items in this series
AZ 15nXT 115cps Photoresist (Quart)
AZ 15nXT 115cps Photoresist (Gallon)
AZ 15nXT 450cps Photoresist (Quart)
AZ 15nXT 450cps Photoresist (Gallon)
Typical Process
Soft Bake: 110C (60-120s)
Expose: i-line or broadband
Post Expose Bake: 120C
Develop: spray or puddle
Developer: AZ 300MIF
2.5µm Lines in AZ 15nXT on Cu
6.0µm film thickness
300mJ/cm2 i-line exposure
0.54NA Stepper
AZ 300MIF Develop (110s)