AZ nLoF 2000 Series photoresists are negative tone materials designed for single layer lift-off and RIE etch processing. Ideal lift-off profiles are achieved with a simple bake, expose, PEB and develop process sequence; no under layers required. Side wall angles are process tunable from strong retro-grade for lift-off, to 90 degrees vertical for RIE. Removal is easy with standard photoresist strippers. Coated film thickness range is 1.8 to 10µm. (AZ 300MIF or AZ 726MIF recommended).
6" Si Wafers; Soft Bake 90C
Items in this series
AZ nLoF 2020 Photoresist (Qrt)
AZ nLoF 2020 Photoresist (Gal)
AZ nLoF 2035 Photoresist (Qrt)
AZ nLoF 2035 Photoresist (Gal)
AZ nLoF 2070 Photoresist (Qrt)
AZ nLoF 2070 Photoresist (Gal)
Typical Process
Soft Bake: 110C (60s)
Expose: i-line/broadband
Post Expose Bake: 110C/60s
Develop: spray or puddle
Developer: AZ 300MIF
7.0µm Lines in AZ nLoF 2070
7.0µm film thickness
180mJ/cm2 i-line exposure
0.54NA Stepper
AZ 300MIF Develop