AZ 125nXT Series Photoresists are advanced, negative tone photo-polymer materials optimized for use in high aspect ratio plating, MEMs, and extreme RIE etch applications. The fully cross linked features are extremely thermally stable and etch resistant. The extreme transparency of this resist allows for ultra-high aspect ratio imaging not possible with conventional DNQ or CA materials. Develop is very fast in standard MIF Developers; film thicknesses from 20 to 120µm are achievable. No post bake re-hydration delays are required.


Typical Process

Soft Bake: 120C

Expose: i-line, h-line, g-line

PEB: Not required

Develop: spray or puddle

Developer: AZ 300MIF