AZ 12XT-20PL Series Photoresists are advanced chemically amplified i-line resists optimized for plating, TSV, and RIE etch applications. High transparency and chemical amplification provide aspect ratios and photospeed not possible with conventional DNQ type photoresists. As compared to a typical DNQ, AZ 12XT requires ~60% less exposure time, ~50% less develop time (and developer volume) and requires NO POST BAKE RE-HYDRATION DELAY. Need additional production capacity? With AZ 12XT Series Photoresists you can double the productivity of your existing exposure systems instead of buying additional tools! MIF developer compatible (AZ 300MIF or AZ 726MIF recommended).

AZ 12XTSpinCurves

6" Si Wafers

Items in this series

AZ 12XT-05 Photoresist (Quart)

AZ 12XT-05 Photoresist (Gallon)

AZ 12XT-10 Photoresist (Quart)

AZ 12XT-10 Photoresist (Gallon)

AZ 12XT-15 Photoresist (Quart)

AZ 12XT-15 Photoresist (Gallon)

Typical Process

Soft Bake: 110C

Expose: i-line/broadband

Post Expose Bake: 90C

Develop: spray/puddle/immersion

Developer: AZ 300 MIF

12XT-10SEM

2.8µm Lines in AZ 12XT-10

10.0µm film thickness

180mJ/cm2 i-line exposure

0.48NA Stepper

AZ 300MIF Develop (120s)