AZ® nLoF 2000 Series photoresists may be patterned with vertical feature side walls or with re-entrant side walls for lift-off processing. The side wall angle is tunable by adjusting the Post Expose Bake temperature (PEB) and/or exposure dose. The matrix below may be used as a general guideline for setting the re-entrant angle.
Process Conditions:
Photoresist: AZ nLoF 2020 Photoresist Thickness: 2.2µm Mask CD: 2.0µm Soft Bake: 110C / 60s Develop: 60s single puddle in AZ® 300MIF
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