AZ® nLoF 2000 Series photoresists may be patterned with vertical feature side walls or with re-entrant side walls for lift-off processing. The side wall angle is tunable by adjusting the Post Expose Bake temperature (PEB) and/or exposure dose. The matrix below may be used as a general guideline for setting the re-entrant angle.

nLoF 2000 Profiles TDS

Process Conditions

Photoresist: AZ nLoF 2020

Photoresist Thickness: 2.2µm

Mask CD: 2.0µm

Soft Bake: 110C / 60s

Develop: 60s single puddle in AZ®