![nLoF 2000 Profile Tuning](/images/TechnicalArticles/nLoF2000ProfileTuningHeader.png)
AZ® nLoF 2000 Series photoresists may be patterned with vertical feature side walls or with re-entrant side walls for lift-off processing. The side wall angle is tunable by adjusting the Post Expose Bake temperature (PEB) and/or exposure dose. The matrix below may be used as a general guideline for setting the re-entrant angle.
![nLoF 2000 Profiles TDS](/images/nLoF2000/nLoF2000ProfilesTDS.png)
Process Conditions
Photoresist: AZ nLoF 2020
Photoresist Thickness: 2.2µm
Mask CD: 2.0µm
Soft Bake: 110C / 60s
Develop: 60s single puddle in AZ®